JPH0158889B2 - - Google Patents
Info
- Publication number
- JPH0158889B2 JPH0158889B2 JP14586281A JP14586281A JPH0158889B2 JP H0158889 B2 JPH0158889 B2 JP H0158889B2 JP 14586281 A JP14586281 A JP 14586281A JP 14586281 A JP14586281 A JP 14586281A JP H0158889 B2 JPH0158889 B2 JP H0158889B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- substrate
- filter
- vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 9
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14586281A JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14586281A JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5866407A JPS5866407A (ja) | 1983-04-20 |
| JPH0158889B2 true JPH0158889B2 (en]) | 1989-12-14 |
Family
ID=15394781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14586281A Granted JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866407A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100822469B1 (ko) * | 2005-12-07 | 2008-04-16 | 삼성전자주식회사 | 복수개의 소자를 상호 격리시키기 위한 에어캐비티를구비한 시스템 온 칩 구조물, 듀플렉서, 및 그 제조 방법 |
-
1981
- 1981-09-16 JP JP14586281A patent/JPS5866407A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5866407A (ja) | 1983-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4456850A (en) | Piezoelectric composite thin film resonator | |
| CA2283887C (en) | Film bulk acoustic wave device | |
| US6060818A (en) | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters | |
| US6812619B1 (en) | Resonator structure and a filter comprising such a resonator structure | |
| US6556103B2 (en) | Piezoelectric resonator with electrode radius related to resonator thickness and vibration mode, and filter using the same | |
| US5815054A (en) | Surface micromachined acoustic wave piezoelectric crystal with electrodes on raised ridges and in spaces therebetween | |
| KR20030092142A (ko) | 박막 음향공진기 및 그 제조방법 | |
| WO2025091598A1 (zh) | 一种声表面波谐振器及其制备方法、滤波器 | |
| JPH0532925B2 (en]) | ||
| EP0483358B1 (en) | Ultra thin quartz crystal filter element of multiple mode | |
| US20250175148A1 (en) | Acoustic resonator | |
| JPH0211043B2 (en]) | ||
| JPH11340775A (ja) | 圧電振動子 | |
| JP3068140B2 (ja) | 圧電薄膜共振子 | |
| US7320164B2 (en) | Method of manufacturing an electronic component | |
| JPH036912A (ja) | 弾性表面波素子 | |
| JPH0365046B2 (en]) | ||
| JPS62266906A (ja) | 圧電薄膜共振子 | |
| JP4196641B2 (ja) | 超薄板圧電デバイスとその製造方法 | |
| JPS58156220A (ja) | 薄膜圧電フイルタ | |
| JPH0158889B2 (en]) | ||
| JPH0640611B2 (ja) | 圧電薄膜共振子 | |
| JPS58137318A (ja) | 薄膜圧電振動子 | |
| JPH09181556A (ja) | 圧電振動子 | |
| JPH0356013B2 (en]) |